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Epitaxial Reactors

Single wafer epitaxial reactors
with high growth rate produces high quality epi film.

Features

Core Technology

Principled deposition technology

A combination of vertical gas flow and high-speed wafer rotation forms a uniform, ultra-thin boundary layer(*) above the wafer.

A thin boundary layer easily takes source gas in and exhausts HCl gas with centrifugal force.

As a result, the following reaction is observed, leading to 20 to 30% of high gas conversion rate which brings high-speed growth.

  • 1. SiHCl3 → SiCl2* ↓ + HCl ↑SiCl2* generated through thermal decomposition is absorbed onto the wafer surface.
  • 2. SiCl2* + H2 → Si ↓ + 2HCl ↑ Single crystal silicon grows on the wafer surface.
  • (*) Boundary layer is an area in the thickness direction where the deposition reaction occurs above the wafer surface.

Advantages of High-speed Wafer Rotation

Faster rotation brings higher growth rate.

Gas conversion rate changes according to wafer rotation speed. As a result, epi growth rate becomes higher with faster rotation.

Faster rotation brings higher growth rate.

Source our company (HT2000FD)

System Specifications(HT2000FD)

System Specifications(HT2000FD)
Wafer size 200mmφ
Heating method Resistance heating from backside
Process temperature 800 - 1,150℃
Rotation speed 300 - 900rpm
Pressure 93(700) - 13.3(100)kPa(Torr)
Gases SiHCl3, SiH2Cl2, H2, HCl
Outer dimension (Main frame) 1,396mm(W) × 2,276mm(D) × 2,350mm(H)
About 2,300 kg 約2,300Kg
image

Development Roadmap

Epitaxial growth systems are process that form a layer of monocrystalline material on a silicon wafer along a uniform crystalline direction. NuFlare Technology released CVD system 「EPIREVO™ S6」 、「EPIREVO™ S8」 for silicon carbide(SiC) devices and 「EPIREVO™ G8」 for gallium-nitride-on-silicon (GaN-on-Si) devices. Those systems are developed by high-speed wafer rotation technology of Si epitaxial growth system 「HT2000FD」.

Development Roadmap
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