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EPIREVO™ G8 8” single-wafer GaN-on-Si MOCVD

EPIREVO™ G8 8” single-wafer
GaN-on-Si MOCVD

EPIREVO G8 Single Wafer MOCVD

The EPIREVO™ G8 MOCVD system deposits high quality GaN films at high growth-rate on 8 inch Si substrates. EPIREVO™ G8 enables low cost LED production as well as high performance power-device applications, both of which help Society reduce its carbon foot print.

Features

High productivity

  • High GaN growth rate : > 9 µm/hour
  • Fast temperature ramp rate : > 200 ℃/minute

Highly quality

  • 8 inch wafer temperature uniformity : < 2 ℃
  • 1100 ℃ Slip free, Si melt-back free

Low cost

  • High TMG utilization ratio: > 20 %
  • High system uptime by in-situ cleaning
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