EPIREVO™ G8 8” single-wafer GaN-on-Si MOCVD
EPIREVO™ G8 8” single-wafer
GaN-on-Si MOCVD
The EPIREVO™ G8 MOCVD system deposits high quality GaN films at high growth-rate on 8 inch Si substrates. EPIREVO™ G8 enables low cost LED production as well as high performance power-device applications, both of which help Society reduce its carbon foot print.
Features
High productivity
- High GaN growth rate : > 9 µm/hour
- Fast temperature ramp rate : > 200 ℃/minute
Highly quality
- 8 inch wafer temperature uniformity : < 2 ℃
- 1100 ℃ Slip free, Si melt-back free
Low cost
- High TMG utilization ratio: > 20 %
- High system uptime by in-situ cleaning
