Variable EB Mask Writer EBM-8000P/H・EBM-8000P/M
EBM－8000P/H for 16/14nm node Production
EBM－8000P/M for 45～20nm node Production
EB Mask Writer
EBM-8000P/H・EBM-8000P/M
Variable EB Mask Writer system "EBM-8000P/H, EBM-8000P/M" for 45～14nm node.
Features
- 1) 50kV acceleration voltage enables writing in greater contrast.
- 2) High throughput with variable stage speed and high current density(400A/㎠)
- 3) Low COO（ Cost of Ownership ）for wide range technology node.
Key Parameters
| Key Parameters | EBM-8000P/H | EBM-8000P/M |
|---|---|---|
| Mask size | 6inch | 6inch |
| Image placement | 4.3nm（3σ） | 6.0nm（3σ） |
| Local CD uniformity | 1.3nm（3σ） | 2.5nm（3σ） |
