Multi-EB Mask Writer MBM™-2000
for 3nm Node Design Rule
MB Mask Writer
MBM™-2000
Multi-EB Mask Writer " MBM™-2000 " for 3nm Node Design Rule
Features
- 1) Excellent accuracy of 260,000 beams.
- 2) PLDC（Pixel Level Dose Correction）technology enables writing in greater contrast.
- 3) High throughput and high-precision writing regardless of complex patterns.
Key Parameters
| Mask size | 6inch |
|---|---|
| Image placement | 1.4nm(３σ) |
| Local CD uniformity | 0.7nm(３σ) |
