EPIREVO™ S6 6” single-wafer SiC Epitaxial Reactor
EPIREVO™ S6 6” single-wafer
SiC Epitaxial Reactor
EPIREVO™ S6 combines improved SiC power device quality with low cost production. The EPIREVO™ S6 realizes high productivity through its 6 inch capability, greater than 50µm/hour growth rate and high temperature wafer handling.
Features
High productivity
- Continuous growth : 150 µm film.
- High growth rate: > 50 µm/hour. <!--
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Excellent wafer temperature uniformity
- 4” wafer : < 1 ℃
- 6” wafer : < 2 ℃
Highly quality
- Excellent uniformity(σ/mean)
Thickness uniformity : < 2 %
(E.E=3 mm)
Doping uniformity : < 4 %
(E.E.=6 mm) - Low defect density: 0.02/cm-2
Auto wafer transfer by robot
- Cassette to Cassette wafer transfer
