EPIREVO™ S8 8” single-wafer SiC Epitaxial Reactor
EPIREVO™ S8 8” single-wafer
SiC Epitaxial Reactor
EPIREVO™ S8 enables high productivity through its 8 inch capability with same configuration and same footprint as EPIREVO™ S6 for 6 inch wafers.
Features
High productivity
- High growth rate: > 50 µm/hour
- Long maintenance cycle
Low defect density
- Minimum downfall density onto wafer
- Long term low defect density
Highly quality
- Excellent uniformity(σ/mean) Thickness uniformity : < 2 % (E.E=5 mm) Doping uniformity : < 5 % (E.E.=5 mm)
Excellent wafer temperature control
- 2 points direct temperature monitoring
- Independent temperrature control of IN and OUT heaters
